JPH0122746B2 - - Google Patents

Info

Publication number
JPH0122746B2
JPH0122746B2 JP54101664A JP10166479A JPH0122746B2 JP H0122746 B2 JPH0122746 B2 JP H0122746B2 JP 54101664 A JP54101664 A JP 54101664A JP 10166479 A JP10166479 A JP 10166479A JP H0122746 B2 JPH0122746 B2 JP H0122746B2
Authority
JP
Japan
Prior art keywords
light
light receiving
receiving element
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54101664A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5624969A (en
Inventor
Takao Kinoshita
Shinji Sakai
Takashi Kawabata
Nobuhiko Shinoda
Mitsuya Hosoe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP10166479A priority Critical patent/JPS5624969A/ja
Publication of JPS5624969A publication Critical patent/JPS5624969A/ja
Priority to US06/930,945 priority patent/US4785338A/en
Publication of JPH0122746B2 publication Critical patent/JPH0122746B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP10166479A 1979-08-09 1979-08-09 Semiconductor integrated circuit element Granted JPS5624969A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10166479A JPS5624969A (en) 1979-08-09 1979-08-09 Semiconductor integrated circuit element
US06/930,945 US4785338A (en) 1979-08-09 1986-11-10 Semi-conductor I.C. element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10166479A JPS5624969A (en) 1979-08-09 1979-08-09 Semiconductor integrated circuit element

Publications (2)

Publication Number Publication Date
JPS5624969A JPS5624969A (en) 1981-03-10
JPH0122746B2 true JPH0122746B2 (en]) 1989-04-27

Family

ID=14306632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10166479A Granted JPS5624969A (en) 1979-08-09 1979-08-09 Semiconductor integrated circuit element

Country Status (2)

Country Link
US (1) US4785338A (en])
JP (1) JPS5624969A (en])

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6063957A (ja) * 1983-09-17 1985-04-12 Toshiba Corp イメ−ジセンサ
JPS6124274A (ja) * 1984-07-13 1986-02-01 Fuji Xerox Co Ltd 光電変換素子
JPS61135272A (ja) * 1984-12-06 1986-06-23 Nippon Kogaku Kk <Nikon> リニアイメ−ジセンサ
JPS6278765U (en]) * 1985-11-05 1987-05-20
JPS6278766U (en]) * 1985-11-06 1987-05-20
JPS62160561U (en]) * 1986-04-01 1987-10-13
JPS6362358A (ja) * 1986-09-03 1988-03-18 Nec Corp 固体撮像装置
JPH01164073A (ja) * 1987-09-11 1989-06-28 Canon Inc 光電変換装置
JPH0259522U (en]) * 1988-10-24 1990-05-01
JPH0732208B2 (ja) * 1989-10-31 1995-04-10 三菱電機株式会社 半導体装置
JPH0521655A (ja) * 1990-11-28 1993-01-29 Mitsubishi Electric Corp 半導体装置および半導体装置用パツケージ
DE69329186T2 (de) 1993-01-01 2001-04-05 Canon Kk Bildlesevorrichtung
US5293511A (en) * 1993-03-16 1994-03-08 Texas Instruments Incorporated Package for a semiconductor device
US5448095A (en) * 1993-12-20 1995-09-05 Eastman Kodak Company Semiconductors with protective layers
JPH08330608A (ja) * 1995-05-29 1996-12-13 Oki Electric Ind Co Ltd 受光センサおよび受発光センサ
US6795120B2 (en) 1996-05-17 2004-09-21 Sony Corporation Solid-state imaging apparatus and camera using the same
JPH1084509A (ja) * 1996-09-06 1998-03-31 Matsushita Electron Corp 撮像装置およびその製造方法
EP1390902A4 (en) 2001-04-27 2008-10-15 Atrua Technologies Inc CAPACITIVE SENSOR SYSTEM WITH IMPROVED CAPACITY MEASUREMENT SENSITIVITY
US7259573B2 (en) * 2001-05-22 2007-08-21 Atrua Technologies, Inc. Surface capacitance sensor system using buried stimulus electrode
TWI241531B (en) * 2001-05-22 2005-10-11 Atrua Technologies Inc Improved connection assembly for integrated circuit sensors
JP2004311783A (ja) * 2003-04-08 2004-11-04 Fuji Xerox Co Ltd 光検出装置、及びその実装方法
JP2006310704A (ja) * 2005-05-02 2006-11-09 Sumitomo Electric Ind Ltd 光送受信モジュール
DE502006003532D1 (de) * 2006-01-17 2009-06-04 Leica Camera Ag Wechselobjektiv mit optisch lesbarer Kennung
DE102007029755A1 (de) 2007-06-27 2009-01-02 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung einer lichtabschirmenden Maske (Light-Shielding-Layer) für Schaltkreise mit integrierten optischen Elementen
JP2008235939A (ja) * 2008-06-27 2008-10-02 Mitsumi Electric Co Ltd 半導体装置
US20100116970A1 (en) * 2008-11-12 2010-05-13 Wen-Long Chou Photo detection device
DE102009060277A1 (de) 2008-12-24 2010-09-02 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung von Justiermarken für licht-undurchlässige bzw. licht-absorbierende Schichten (Light-Shield-Resistmasken)
US9470985B2 (en) * 2012-03-20 2016-10-18 Asml Netherlands B.V. Lithographic apparatus, sensor and method
JP2014110264A (ja) * 2012-11-30 2014-06-12 Toppan Printing Co Ltd 固体撮像装置
JP6251956B2 (ja) * 2013-01-22 2017-12-27 セイコーエプソン株式会社 光学素子収納用パッケージ、光学フィルターデバイス、光学モジュール、および電子機器
EP2814064B1 (en) * 2013-06-10 2020-11-25 Nxp B.V. Integrated sensor chip package with directional light sensor, apparatus including such a package and method of manufacturing such an integrated sensor chip package
JP5860071B2 (ja) * 2014-02-12 2016-02-16 株式会社半導体エネルギー研究所 半導体装置
JP6484982B2 (ja) * 2014-09-30 2019-03-20 日亜化学工業株式会社 発光装置の製造方法
US10082651B2 (en) 2016-04-11 2018-09-25 Omnivision Technologies, Inc. Slim imager, associated system-in-package, and associated method
JP7060326B2 (ja) * 2017-02-14 2022-04-26 古河電気工業株式会社 半導体レーザモジュール
JP6870592B2 (ja) * 2017-11-24 2021-05-12 豊田合成株式会社 発光装置
JP7674083B2 (ja) * 2020-08-26 2025-05-09 浜松ホトニクス株式会社 光検出装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2181494A (en) * 1936-06-25 1939-11-28 Bell Telephone Labor Inc Light-sensitive electric device
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells
US3102242A (en) * 1957-05-01 1963-08-27 Sylvania Electric Prod Oscillator with electroluminescent and photoconductive elements
NL235086A (en]) * 1958-02-22 1900-01-01
DE1276232B (de) * 1959-05-29 1968-08-29 Siemens Ag Insbesondere auf Strahlung ansprechende Halbleiterkristallanordnung mit pn-UEbergangund den pn-UEbergang gegen Feuchtigkeit schuetzender Huelle
US3281606A (en) * 1963-07-26 1966-10-25 Texas Instruments Inc Small light sensor package
US3448351A (en) * 1967-06-01 1969-06-03 Gen Electric Cryogenic avalanche photodiode of insb with negative resistance characteristic at potential greater than reverse breakdown
GB1232812A (en]) * 1968-02-02 1971-05-19
US3560813A (en) * 1969-03-13 1971-02-02 Fairchild Camera Instr Co Hybridized monolithic array package
US3654527A (en) * 1970-07-27 1972-04-04 Gen Electric Unitary full wave inverter
US3842263A (en) * 1973-02-01 1974-10-15 Gen Electric Molded opto-electronic transducer
JPS5331714B2 (en]) * 1974-09-11 1978-09-04
JPS5824951B2 (ja) * 1974-10-09 1983-05-24 ソニー株式会社 コウガクソウチ
US3969751A (en) * 1974-12-18 1976-07-13 Rca Corporation Light shield for a semiconductor device comprising blackened photoresist
JPS562466Y2 (en]) * 1975-08-29 1981-01-20
GB1597712A (en) * 1977-01-17 1981-09-09 Plessey Co Ltd Display devices
JPS5422122A (en) * 1977-07-20 1979-02-19 Fujitsu Ltd Solid state pickup element
JPS54141690A (en) * 1978-04-26 1979-11-05 Murata Manufacturing Co Infrared ray detector and making method thereof
JPS54146682A (en) * 1978-05-08 1979-11-16 Murata Manufacturing Co Infrared ray detector

Also Published As

Publication number Publication date
JPS5624969A (en) 1981-03-10
US4785338A (en) 1988-11-15

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